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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0810.5339 (cond-mat)
[Submitted on 29 Oct 2008]

Title:High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides (Supplementary Information)

Authors:X. Hong, A. Posadas, K. Zou, C. H. Ahn, J. Zhu
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Abstract: Supplementary Information to arXiv:0810.4466: 1. Characterizations of Pb(Zr_0.2Ti_0.8)O_3 (PZT) films. 2. Substrate preparation before the exfoliation of graphene. 3. The band structure of FLG. 4. Dielectric constant measurements of PZT. 5. rho(V_g) and R_H(V_g) fitting inside the band overlap regime. 6. The deformation potential of longitudinal acoustic (LA) phonons in graphene. 7. Resistivity and Hall measurements of a SiO_2-gated FLG.
Comments: 8 pages, 5 figures. Supplementary material to arXiv:0810.4466
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0810.5339 [cond-mat.mes-hall]
  (or arXiv:0810.5339v1 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0810.5339
Journal reference: Phys. Rev. Lett. 102, 136808 (2009)
Related DOI: https://doi.org/10.1103/PhysRevLett.102.136808

Submission history

From: Xia Hong [view email]
[v1] Wed, 29 Oct 2008 19:44:52 UTC (125 KB)
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