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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0810.4268 (cond-mat)
[Submitted on 23 Oct 2008 (v1), last revised 23 Apr 2009 (this version, v3)]

Title:Electron spin blockade and singlet-triplet transition in a silicon single electron transistor

Authors:Binhui Hu, C.H. Yang (Department of Electrical and Computer Engineering, University of Maryland at College Park)
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Abstract: We investigate a silicon single-electron transistor (SET) in a metal-oxide-semiconductor (MOS) structure by applying a magnetic field perpendicular to the sample surface. The quantum dot is defined electrostatically in a point contact channel and by the potential barriers from negatively charged interface traps. The magnetic field dependence of the excitation spectrum is primarily driven by the Zeeman effect. In the two-electron singlet-triplet (ST) transition, electron-electron Coulomb interaction plays a significant role. The evolution of Coulomb blockade peaks with magnetic field B is also owing to the Zeeman splitting with no obvious orbital effect up to 9 T. The filling pattern shows an alternate spin-up-spin-down sequence. The amplitude spectroscopy allows for the observation of the spin blockade effect, where the two-electron system forms a singlet state at low fields, and the spin polarized injection from the lead reduces the tunneling conductance by a factor of 8. At a higher magnetic field, due to the ST transition, the spin blockade effect is lifted and the conductance is fully recovered.
Comments: 8 pages, 5 figures, submitted to Physical Review B
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall)
Cite as: arXiv:0810.4268 [cond-mat.mes-hall]
  (or arXiv:0810.4268v3 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0810.4268
Related DOI: https://doi.org/10.1103/PhysRevB.80.075310

Submission history

From: Binhui Hu [view email]
[v1] Thu, 23 Oct 2008 14:16:44 UTC (527 KB)
[v2] Thu, 23 Apr 2009 16:24:39 UTC (1,678 KB)
[v3] Thu, 23 Apr 2009 20:35:58 UTC (1,678 KB)
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