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Condensed Matter > Mesoscale and Nanoscale Physics

arXiv:0804.2513v2 (cond-mat)
[Submitted on 16 Apr 2008 (v1), last revised 18 Dec 2009 (this version, v2)]

Title:Fabrication of Graphene p-n-p Junctions with Contactless Top Gates

Authors:Gang Liu, Jairo Valesco Jr, Wenzhong Bao, Chun Ning Lau
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Abstract: We developed a multi-level lithography process to fabricate graphene p-n-p junctions with the novel geometry of contactless, suspended top gates. This fabrication procedure minimizes damage or doping to the single atomic layer, which is only exposed to conventional resists and developers. The process does not require special equipment for depositing gate dielectrics or releasing sacrificial layers, and is compatible with annealing procedures that improve device mobility. Using this technique, we fabricate graphene devices with suspended local top gates, where the creation of high quality graphene p-n-p junctions is confirmed by transport data at zero and high magnetic fields.
Subjects: Mesoscale and Nanoscale Physics (cond-mat.mes-hall); Strongly Correlated Electrons (cond-mat.str-el)
Cite as: arXiv:0804.2513 [cond-mat.mes-hall]
  (or arXiv:0804.2513v2 [cond-mat.mes-hall] for this version)
  https://doi.org/10.48550/arXiv.0804.2513
Journal reference: Appl. Phys. Lett., 92, 203103 (2008)
Related DOI: https://doi.org/10.1063/1.2928234

Submission history

From: Chun Ning (Jeanie) Lau [view email]
[v1] Wed, 16 Apr 2008 03:01:31 UTC (537 KB)
[v2] Fri, 18 Dec 2009 20:26:55 UTC (833 KB)
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