Condensed Matter > Mesoscale and Nanoscale Physics
[Submitted on 19 Feb 2008 (this version), latest version 14 Apr 2008 (v2)]
Title:Electronic spin drift in graphene field effect transistors
View PDFAbstract: We studied the drift of electron spins under an applied DC electric field in single layer graphene spin valves in a field effect transport geometry at room temperature. In the metallic conduction regime ($n \simeq 3.5 \times 10^{16}$ m$^{-2}$), for DC fields of about $\pm$70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased/decreased, depending on the direction of the DC field and the carrier type, by as much as $\pm$50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.
Submission history
From: Mihaita Popinciuc [view email][v1] Tue, 19 Feb 2008 11:42:51 UTC (145 KB)
[v2] Mon, 14 Apr 2008 14:47:05 UTC (145 KB)
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