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Condensed Matter > Materials Science

arXiv:0801.3231 (cond-mat)
[Submitted on 21 Jan 2008 (v1), last revised 18 Mar 2008 (this version, v2)]

Title:Oblique Hanle Effect in Semiconductor Spin Transport Devices

Authors:Jing Li, Biqin Huang, Ian Appelbaum
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Abstract: Spin precession and dephasing ("Hanle effect") provides an unambiguous means to establish the presence of spin transport in semiconductors. We compare theoretical modeling with experimental data from drift-dominated silicon spin-transport devices, illustrating the non-trivial consequences of employing oblique magnetic fields (due to misalignment or intentional, fixed in-plane field components) to measure the effects of spin precession. Model results are also calculated for Hanle measurements under conditions of diffusion-dominated transport, revealing an expected Hanle peak-widening effect induced by the presence of fixed in-plane magnetic bias fields.
Subjects: Materials Science (cond-mat.mtrl-sci); Other Condensed Matter (cond-mat.other)
Cite as: arXiv:0801.3231 [cond-mat.mtrl-sci]
  (or arXiv:0801.3231v2 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0801.3231
Journal reference: Appl. Phys. Lett. 92, 142507 (2008)
Related DOI: https://doi.org/10.1063/1.2907497

Submission history

From: Ian Appelbaum [view email]
[v1] Mon, 21 Jan 2008 17:08:44 UTC (76 KB)
[v2] Tue, 18 Mar 2008 18:52:12 UTC (82 KB)
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