Condensed Matter > Materials Science
[Submitted on 6 Jan 2008 (this version), latest version 22 Jan 2008 (v2)]
Title:Voltage control of magnetocrystalline anisotropy in ferromagnetic - semiconductor/piezoelectric hybrid structures
View PDFAbstract: The ferromagnetic/magnetostrictive, ferroelectric/piezoelectric, and semiconductor classes of material are key to modern microelectronic technologies. The first two classes enable electrical, magnetic, and mechanical sensing/transducer applications and non-volatile data storage, while semiconductors dominate information processing. The ever-increasing demand for integrated, lower power, higher speed multi-functional microelectronic devices has stimulated intense research into hybrid systems exploiting the different potentials of these material classes leading, for example, to voltage assisted magnetisation switching in metal ferromagnet/piezoelectric devices, ferroelectric gate transistors, and strain engineering and gate control of magnetism in ferromagnetic semiconductors. This letter and a related paper report significant progress towards the realisation of multifunctional hybrid structures combining all the above material classes. Here we report the realisation of voltage control (via strain) of magnetic anisotropies and magnetisation switching in a hybrid ferromagnetic-semiconductor/ piezoelectric device.
Submission history
From: Andrew Rushforth [view email][v1] Sun, 6 Jan 2008 19:19:35 UTC (513 KB)
[v2] Tue, 22 Jan 2008 14:25:18 UTC (180 KB)
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