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Condensed Matter > Materials Science

arXiv:0707.0461 (cond-mat)
[Submitted on 3 Jul 2007]

Title:High charge-carrier mobility and low trap density in a rubrene derivative

Authors:S. Haas, A. F. Stassen, G. Schuck, K. P. Pernstich, D. J. Gundlach, B. Batlogg, U. Berens, H.-J. Kirner
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Abstract: We have synthesized, crystallized and studied the structural and electric transport properties of organic molecular crystals based on a rubrene derivative with {\em t}-butyl sidegroups at the 5,11 positions. Two crystalline modifications are observed: one (A) distinct from that of rubrene with larger spacings between the naphtacene backbones, the other (B) with a in-plane structure presumably very similar compared to rubrene. The electric transport properties reflect the different structures: in the latter phase (B) the in-plane hole mobility of 12 cm$^2$/Vs measured on single crystal FETs is just as high as in rubrene crystals, while in the A phase no field-effect could be measured. The high crystal quality, studied in detail for B, reflects itself in the density of gap states: The deep-level trap density as low as $10^{15}$ cm$^{-3}$ eV$^{-1}$ has been measured, and an exponential band tail with a characteristic energy of 22 meV is observed. The bulk mobility perpendicular to the molecular planes is estimated to be of order of $10^{-3}$ -- $10^{-1}$ cm$^2$/Vs.
Subjects: Materials Science (cond-mat.mtrl-sci)
Cite as: arXiv:0707.0461 [cond-mat.mtrl-sci]
  (or arXiv:0707.0461v1 [cond-mat.mtrl-sci] for this version)
  https://doi.org/10.48550/arXiv.0707.0461
Journal reference: Phys. Rev. B 76, 115203 (2007)
Related DOI: https://doi.org/10.1103/PhysRevB.76.115203

Submission history

From: Simon Haas [view email]
[v1] Tue, 3 Jul 2007 16:48:43 UTC (271 KB)
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