Condensed Matter > Materials Science
[Submitted on 29 Dec 2023 (v1), last revised 16 May 2024 (this version, v3)]
Title:Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
View PDF HTML (experimental)Abstract:Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in JTMDs can form n- and p-like Ohmic contacts, and this may be used in device applications such as pin diodes and photovoltaic cells. In this study, we exploit this property to design n- and p-type metal-oxide-semiconductor field effect transistors (MOSFETs). First, we use density-functional theory calculations to study the inherent dipole field strength in the trilayer JTMD MoSSe. The intrinsic dipole of MoSSe causes band bending at both the metal/MoSSe and MoSSe/metal interfaces, resulting in electron and hole accumulation to form n- and p-type Ohmic contact regions. We incorporate this property into a 2D finite-element-based Poisson-drift-diffusion solver to perform simulations, on the basis of which we design complementary MOSFETs. Our results demonstrate that JTMDs can be used to make n- and p-MOSFETs in the same layer without the need for any extra doping.
Submission history
From: Yuh-Renn Wu [view email][v1] Fri, 29 Dec 2023 13:16:06 UTC (30,781 KB)
[v2] Wed, 3 Apr 2024 09:55:01 UTC (4,373 KB)
[v3] Thu, 16 May 2024 14:41:16 UTC (4,225 KB)
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