Condensed Matter > Materials Science
[Submitted on 15 May 2024 (v1), last revised 16 May 2024 (this version, v2)]
Title:Formation of Beta-Indium Selenide Layers Grown via Selenium Passivation of InP(111)B Substrate
View PDFAbstract:Indium selenide, In2Se3, has recently attracted growing interest due to its novel properties, including room temperature ferroelectricity, outstanding photoresponsivity, and exotic in-plane ferroelectricity, which open up new regimes for next generation electronics. In2Se3 also provides the important advantage of tuning the electrical properties of ultra-thin layers with an external electrical and magnetic field, making it a potential platform to study novel two-dimensional physics. Yet, In2Se3 has many different polymorphs, and it has been challenging to synthesize single-phase material, especially using scalable growth methods, as needed for technological applications. In this paper, we use aberration-corrected scanning transmission electron microscopy to characterize the microstructure of twin-free single-phase ultra-thin layers of beta-In2Se3, prepared by a unique molecular beam epitaxy approach. We emphasize features of the In2Se3 layer and In2Se3/InP interface which provide evidence for understanding the growth mechanism of the single-phase In2Se3. This novel approach for forming high-quality twin-free single phase two-dimensional crystals on InP substrates is likely to be applicable to other technologically important substrates.
Submission history
From: Kaushini Wickramasinghe [view email][v1] Wed, 15 May 2024 14:22:05 UTC (999 KB)
[v2] Thu, 16 May 2024 01:22:02 UTC (999 KB)
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